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The TO263-7 encapsulation of a new generation of 1200 V CoolSiC groove MOSFET promote the development of electric transportation
Time：2023/7/11 16:01:12
nfineon with TO263-7 encapsulated by a new generation of vehicle gauge level of 1200 V CoolSiC MOSFET. The new generation of vehicle gauge level of silicon carbide (SiC) mosfets have high power density and efficiency, can realize two-way charging function, and significantly reduces the on-board charge (OBC) and the application of DC - DC system costs.
Compared with the first generation product, the 1200 V CoolSiC series switch loss was reduced by 25%, with similar best switch performance. This kind of switch performance improvements achieved high frequency operation, reduce the system size and improve the power density. Due to the grid - the source voltage threshold (VGS (th)) and Crss/Ciss ratio greater than 4 V is extremely low, thus can realize reliable when VGS = 0 V shut off, and there is no risk of parasitic conduction. This makes unipolar drives may, which, in turn, reduces the system cost and complexity. In addition, a new generation of products with low on resistance (RDS (on)), reduced to 55 ℃ to 175 ℃ temperature range conduction loss.
Advanced chip SMT technology diffusion welding (. XT technology) significantly improved the thermal properties of encapsulation, compared to the first generation product, SiC MOSFET junction temperature was reduced by 25%.
In addition, the creepage distance of 5.89 mm of MOSFET, conform to the requirements of the 800 V system and reduce the workload of coating. To meet the needs of different applications, infineon provides a series of RDS (on) options, including on the market at present only the TO263-7 9 m Ω encapsulation.
KOSTAL using CoolSiC MOSFET in the OBC platform
KOSTAL Automobil Elektrik for China at the OEM to provide a new generation of infineon's latest CoolSiC MOSFET is adopted in OBC platform. KOSTAL is one of the world's leading international car charger system suppliers, through its standardization platform solutions for a global provide safe, reliable and efficient products, can meet the requirements of the OEM and global regulations.
Infineon technologies car level gauge pressure chip and discrete device product line, vice President, Robert Hermann said: "the low carbon is the main challenge of this decade, let us have more power to push the car together with customers of electrification process. Therefore, we are very happy to cooperate with KOSTAL. The project highlighted our standard product portfolio in the use of advanced technology of SiC car charger powerful position in the market."
KOSTAL ASIA, vice President and technology executive director Shen Jianyu, said: "the new 1200 v CoolSiC infineon groove MOSFET high rated voltage, excellent robustness, are key components in OBC platform for our future generation. These advantages will help us to create a compatible design, to manage our most advanced technological solutions, to realize optimization of delivery cost and mass market."
The supply position
The TO263-7 encapsulation of 1200 v
